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H20R1203 IGBT power transistor

Specifications/Feature

Brand/Make: Infineon Technologies (Original)

Powerful monolithic body diode with low forward voltage designed for soft commutation only

very tight parameter distribution

high ruggedness,temperature stable behavior

lowVCEsat

easy parallel switching capability due to positive temperature coefficient in VCEsat

LowEMI

Qualified according to JEDEC for target applications

Pb-free lead plating; ROHS complaint

Collector-emitter voltage VCE: 1200 V

DC collector current,limited by Tvjmax IC: 40A at 25°C and 20A at 100°C

Gate-emitter voltage / Transient Gate-emitter voltage, ) VGE :±20 to ±25volt

VCEsat :1.48V at 25°C

Tvjmax :175°C

Applications:

Inductive cooking
Inverterized microwave ovens
Resonant converters
Softs witching applications
Electronics Projects
* Image shown is a representation only.

H20R1203 H20R 1203 IGBT power transistor - 20A / 1200V

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