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Features & Specifications 

N-Channel Power MOSFET

Continuous Drain Current (ID): 35A

Pulsed Drain Current (ID-peak) is 50A

Drain to Source Breakdown Voltage: 60V

Drain Source Resistance (RDS) is 0.018 Ohms

Gate threshold voltage (VGS-th) is 20V (max)

Rise time and fall time is 50nS and 15nS

Input Capacitance 1300pF

Output Capacitance 300pF

Available in To-220 package

Dimensions of 1 Piece
L- 2cm
W- 1cm
H- 0.5cm
Weight - 5grams

P55NF06 N-Channel Power MOSFET

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