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BU508A is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.


Features:-

• High Ruggedness

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Detailed Specifications:-

Transistor Polarity NPN

Collector−Emitter Voltage (VCEO)1500V

Continuous Collector Current (Ic)8A

Operating Temperature Range-65 - 150°C

Power Dissipation (Pd)125W

Collector Peak Current (ICM)15A

Thermal Resistance Junction-Case2.5°C/W

Fall Time (tF)550 ns

Transition Frequency (fT)7MHz

BU508A NPN High Voltage Fast switching Power Transistor 700V 5A TO-3PN Package

All types electronics modules, components, device, and mobile phones

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